Strain-controlled power devices as inspired by human reflex

This paper presents a strain-controlled power device (SPD) inspired by the human reflex. Using a cantilever-structured AlGaN/AlN/GaN-based high electron mobility transistor (HEMT), the device modulates output power (2.30–2.72 × 10³ W cm⁻²) with weak mechanical stimuli (0–16 mN) at 1 V gate bias. Acceleration-feedback control is demonstrated, showing real-time power adjustment (ΔP of 72.78–132.89 W cm⁻² at 1–5 G acceleration) at 15 V. The SPD is promising for AI applications, including autopilot, robotics, and human-machine interfaces.

Shuo Zhang, Bei Ma, Xingyu Zhou, Qilin Hua, Jian Gong, Ting Liu, Xiao Cui, Jiyuan Zhu, Wenbin Guo, Liang Jing, Weiguo Hu, Zhong Lin Wang