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Room temperature photosensitive ferromagnetic semiconductor using MoS₂

Engineering and Technology

Room temperature photosensitive ferromagnetic semiconductor using MoS₂

J. Lu, Y. Xu, et al.

Discover the groundbreaking development of a room-temperature photosensitive ferromagnetic semiconductor through helium ion beam treatment of MoS₂, conducted by Jingjing Lu and colleagues. This innovative research not only enhances magnetic properties but also maintains semiconducting capabilities, paving the way for advanced spintronic devices that can be controlled via light, magnetic, and electric fields.... show more
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