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Abstract
This paper presents an open-system quantum transport treatment to investigate the local density of electron states and conductive properties of δ-layer systems. Applying this treatment to phosphorus δ-layers in silicon explains the origin of recently observed shallow sub-bands and reproduces measured sheet resistance values. Analysis reveals two key quantum-mechanical effects: spatially distinct layers of free electrons with different average energies, and significant sheet resistance dependence on δ-layer thickness for a fixed sheet charge density.
Publisher
Communications Physics
Published On
Sep 13, 2021
Authors
Denis Mamaluy, Juan P. Mendez, Xujiao Gao, Shashank Misra
Tags
quantum transport
local density of states
δ-layer systems
phosphorus δ-layers
sheet resistance
electron states
silicon
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