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Photon-trapping-enhanced avalanche photodiodes for mid-infrared applications

Engineering and Technology

Photon-trapping-enhanced avalanche photodiodes for mid-infrared applications

D. Chen, S. D. March, et al.

Explore the groundbreaking advancements in avalanche photodiodes (APDs) enhanced with photon-trapping structures for mid-infrared applications. This innovative research by Dekang Chen, Stephen D. March, and colleagues tackles the notorious challenge of high dark current in narrow-bandgap materials, leading to significantly improved quantum efficiency and lower dark current density.

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Playback language: English
Abstract
This paper reports on the design and experimental demonstration of avalanche photodiodes (APDs) enhanced with photon-trapping structures for mid-infrared applications. The design addresses the challenge of high dark current in narrow-bandgap materials, which limits the signal-to-noise ratio (SNR) of mid-wave infrared (MWIR) photodetectors. By using photon-trapping structures to enhance quantum efficiency and minimizing absorber thickness to suppress dark current, the APDs achieve high quantum efficiency and significantly lower dark current density compared to state-of-the-art HgCdTe and AlInAsSb APDs. Furthermore, the devices exhibit a high bandwidth and gain-bandwidth product.
Publisher
Nature Photonics
Published On
May 15, 2023
Authors
Dekang Chen, Stephen D. March, Andrew H. Jones, Yang Shen, Adam A. Dadey, Keye Sun, J. Andrew McArthur, Alec M. Skipper, Xingjun Xue, Bingtian Guo, Junwu Bai, Seth R. Bank, Joe C. Campbell
Tags
avalanche photodiodes
mid-infrared applications
photon-trapping structures
quantum efficiency
dark current density
gain-bandwidth product
narrow-bandgap materials
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