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Machine learning enables the discovery of 2D Invar and anti-Invar monolayers

Engineering and Technology

Machine learning enables the discovery of 2D Invar and anti-Invar monolayers

S. Tian, K. Zhou, et al.

Discover the groundbreaking research by Shun Tian, Ke Zhou, Wanjian Yin, and Yilun Liu, which reveals how in-plane tensile stiffness and out-of-plane bending stiffness can classify thermal expansion in 2D crystals. This study paves the way for the design of 2D Invar monolayers with zero thermal expansion and anti-Invar monolayers with extreme thermal behavior, advancing the field of nanoscale electronics.

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~3 min • Beginner • English
Abstract
Materials demonstrating positive thermal expansion (PTE) or negative thermal expansion (NTE) are quite common, whereas those exhibiting zero thermal expansion (ZTE) are notably scarce. In this work, we identify the mechanical descriptors, namely in-plane tensile stiffness and out-of-plane bending stiffness, that can effectively classify PTE and NTE 2D crystals. By utilizing high-throughput calculations and the state-of-the-art symbolic regression method, these descriptors aid in the discovery of ZTE or 2D Invar monolayers with the linear thermal expansion coefficient (LTEC) within ±2 × 10⁻⁶ K⁻¹ in the middle range of temperatures. Additionally, the descriptors assist the discovery of large PTE and NTE 2D monolayers with the LTEC larger than ±15 × 10⁻⁶ K⁻¹, which are so-called 2D anti-Invar monolayers. Advancing our understanding of materials with exceptionally low or high thermal expansion is of substantial scientific and technological interest, particularly in the development of next-generation electronics at the nanometer or even Ångstrom scale.
Publisher
Nature Communications
Published On
Aug 14, 2024
Authors
Shun Tian, Ke Zhou, Wanjian Yin, Yilun Liu
Tags
thermal expansion
2D crystals
Invar monolayers
anti-Invar monolayers
nanoscale electronics
high-throughput calculations
symbolic regression
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