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Low-defect-density WS2 by hydroxide vapor phase deposition

Engineering and Technology

Low-defect-density WS2 by hydroxide vapor phase deposition

Y. Wan, E. Li, et al.

Discover groundbreaking advancements in 2D semiconducting monolayers! Researchers have developed a highly efficient method using hydroxide W species for sulfurization, drastically reducing defect density in WS2 monolayers. The results show remarkable electron mobility and substantial on-state current, revolutionizing the potential for industrialization of 2D materials. This innovative work was conducted by Yi Wan, En Li, Zhihao Yu, and other esteemed authors.... show more
Citation Metrics
Citations
128
Influential Citations
2
Reference Count
65
Citation by Year

Note: The citation metrics presented here have been sourced from Semantic Scholar and OpenAlex.

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