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Intersystem crossing and exciton-defect coupling of spin defects in hexagonal boron nitride

Physics

Intersystem crossing and exciton-defect coupling of spin defects in hexagonal boron nitride

T. J. Smart, K. Li, et al.

Discover groundbreaking insights into the design of quantum defects in wide-bandgap 2D materials, particularly hexagonal boron nitride (h-BN). This research by Tyler J. Smart, Kejun Li, Junqing Xu, and Yuan Ping explores static and dynamic properties, highlighting the potential of single-photon emitters and spin qubits for future technologies.

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