Engineering and TechnologyCommunications Physics
Atomic-scale tuning of ultrathin memristors
R. Goul, A. Marshall, et al.
Researchers Ryan Goul, Angelo Marshall, Sierra Seacat, Hartwin Peelaers, Francisco C. Robles Hernandez, and Judy Z. Wu have achieved a breakthrough with atomically tunable Pd/M1/M2/Al ultrathin memristors, showcasing exciting exponential increases in high state resistance and on/off ratios. This work opens up pathways for designing high-performance memristive devices at unprecedented scales.
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