A nonvolatile magnon field effect transistor at room temperature

Index

Abstract

The increasing heat problem in the information industry necessitates non-charge-based technologies. This research demonstrates a nonvolatile three-terminal lateral magnon field effect transistor (Magnon FET) operating at room temperature. The device utilizes a ferrimagnetic insulator (Y3Fe5O12) on a ferroelectric material (PMN-PT or PZT), with Pt stripes serving as injector, gate, and detector. Gate voltage pulses nonvolatiley regulate magnon transport in Y3Fe5O12, exhibiting a high on/off ratio. This work establishes a foundation for energy-efficient magnon-based devices.

Publisher

Nature Communications

Published On

Oct 29, 2024

Authors

Jun Cheng, Rui Yu, Liang Sun, Kang He, Tongzhou Ji, Man Yang, Zeyuan Zhang, Xueli Hu, Heng Niu, Xi Yang, Peng Chen, Gong Chen, Jiang Xiao, Fengzhen Huang, Xiaomei Lu, Hongling Cai, Huaiyang Yuan, Bingfeng Miao, Haifeng Ding

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