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A nonvolatile magnon field effect transistor at room temperature

Engineering and Technology

A nonvolatile magnon field effect transistor at room temperature

J. Cheng, R. Yu, et al.

Discover groundbreaking advancements in energy-efficient technology with the development of a nonvolatile three-terminal lateral magnon field effect transistor (Magnon FET) by Jun Cheng, Rui Yu, and colleagues. This innovative device operates at room temperature and harnesses magnon transport in a unique configuration, paving the way for next-generation devices in the information industry.

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Playback language: English
Abstract
The increasing heat problem in the information industry necessitates non-charge-based technologies. This research demonstrates a nonvolatile three-terminal lateral magnon field effect transistor (Magnon FET) operating at room temperature. The device utilizes a ferrimagnetic insulator (Y3Fe5O12) on a ferroelectric material (PMN-PT or PZT), with Pt stripes serving as injector, gate, and detector. Gate voltage pulses nonvolatiley regulate magnon transport in Y3Fe5O12, exhibiting a high on/off ratio. This work establishes a foundation for energy-efficient magnon-based devices.
Publisher
Nature Communications
Published On
Oct 29, 2024
Authors
Jun Cheng, Rui Yu, Liang Sun, Kang He, Tongzhou Ji, Man Yang, Zeyuan Zhang, Xueli Hu, Heng Niu, Xi Yang, Peng Chen, Gong Chen, Jiang Xiao, Fengzhen Huang, Xiaomei Lu, Hongling Cai, Huaiyang Yuan, Bingfeng Miao, Haifeng Ding
Tags
magnon field effect transistor
energy-efficient technology
nonvolatile device
room temperature operation
ferrimagnetic insulator
magnet transport

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