A nonvolatile magnon field effect transistor at room temperature

Information industry is one of the major drivers of the world economy, but its rapid growth leads to severe heat problems. This calls for non-charge-based technologies. Magnons can transmit spin information without electron motion and hold potential in the post-Moore era. Here, we demonstrate a nonvolatile three-terminal lateral magnon field effect transistor operating at room temperature. The device consists of a ferrimagnetic insulator (Y3Fe5O12) on a ferroelectric material [Pb(Mg1/3Nb2/3)0.7Ti0.3O3 or Pb(Zr0.52Ti0.48)O3], with three Pt stripes as injector, gate, and detector. The magnon transport in Y3Fe5O12 can be regulated by gate voltage pulses in a nonvolatile manner with a high on/off ratio. Our findings provide a foundation for energy-efficient magnon-based devices.