Chemistry

Prolonged photostability in hexagonal boron nitride quantum emitters

S. X. Li, T. Ichihara, et al.

Discover groundbreaking findings on single-photon emitters in hexagonal boron nitride, revealing novel insights into their photoinstability and effective solutions for achieving persistent photostability. This research, conducted by a talented team including Sylvia Xin Li and Michael S. Strano, sheds light on the challenges and advancements in quantum technologies.

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Playback language: English

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Abstract

Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising for quantum technologies, but their photoinstability hinders applications. This study reveals ubiquitous photobleaching in hBN vacancy emitters, characterized by two time constants: a fast, O₂-sensitive bleaching (5-10 s) and a slower process (150-220 s), potentially due to carbon-assisted defect migration. Annular dark-field scanning transmission electron microscopy (ADF-STEM) visualizes vacancy defects and carbon substitution. Thermal annealing at 850 °C eliminates both bleaching processes, achieving persistent photostability.

Publisher

Communications Materials

Published On

Mar 06, 2023

Authors

Sylvia Xin Li, Takeo Ichihara, Hyoju Park, Guangwei He, Daichi Kozawa, Yi Wen, Volodymyr B. Koman, Yuwen Zeng, Matthias Kuehne, Zhe Yuan, Samuel Faucher, Jamie H. Warner, Michael S. Strano