This paper demonstrates the stable operation of a photocathode comprising Si and GaN for 3,000 hrs without performance degradation in two-electrode configurations. The GaN nanowires on the Si photocathode transform *in situ* into Ga-O-N, enhancing hydrogen evolution. First-principles calculations reveal atomic-scale surface metallization of the *in situ* Ga-O-N species. This study overcomes the efficiency-stability dilemma of extrinsic cocatalysts, offering a path for practical photoelectrochemical devices.
Publisher
Nature Communications
Published On
Apr 11, 2023
Authors
Yixin Xiao, Xianghua Kong, Srinivas Vanka, Wan Jae Dong, Guosong Zeng, Zhengwei Ye, Kai Sun, Ishtiaque Ahmed Navid, Baowen Zhou, Francesca M. Toma, Hong Guo, Zetian Mi
Tags
photocathode
hydrogen evolution
GaN
Si
photoelectrochemical devices
stability
efficiency
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