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Generative design of stable semiconductor materials using deep learning and density functional theory

Engineering and Technology

Generative design of stable semiconductor materials using deep learning and density functional theory

E. M. D. Siriwardane, Y. Zhao, et al.

Explore groundbreaking advancements in semiconductor research with work conducted by Edirisuriya M. Dilanga Siriwardane, Yong Zhao, Indika Perera, and Jianjun Hu. This study unveils a novel computational pipeline integrating generative adversarial networks and high-throughput calculations, leading to the discovery of 12 stable AA'MH6 semiconductors boasting remarkable wide-bandgap properties.

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Abstract
Semiconductor device technology has greatly developed in complexity since discovering the bipolar transistor. In this work, we developed a computational pipeline to discover stable semiconductors by combining generative adversarial networks (GAN), classifiers, and high-throughput first-principles calculations. We used CubicGAN, a GAN-based algorithm for generating cubic materials and developed a classifier to screen the semiconductors and studied their stability using first principles. We found 12 stable AA'MH6 semiconductors in the F-43m space group including BaNaRhH6, BaSrZnH6, BaCsAlH6, SrTlIrH6, KNaNiH6, NaYRuH6, CsKSiH6, CaScMnH6, YZnMnH6, NaZrMnH6, AgZrMnH6, and ScZnMnH6. Previous research reported that five AA'IrH6 semiconductors with the same space group were synthesized. Our research shows that AA'MnH6 and NaYRuH6 semiconductors have considerably different properties compared to the rest of the AA'MH6 semiconductors. Based on the accurate hybrid functional calculations, AA'MH6 semiconductors are found to be wide-bandgap semiconductors. Moreover, BaSrZnH6 and KNaNiH6 are direct-bandgap semiconductors, whereas others exhibit indirect bandgaps.
Publisher
npj Computational Materials
Published On
Jan 31, 2022
Authors
Edirisuriya M. Dilanga Siriwardane, Yong Zhao, Indika Perera, Jianjun Hu
Tags
semiconductors
generative adversarial networks
CubicGAN
stable materials
bandgap properties
high-throughput calculations
AA'MH6
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