This paper demonstrates a novel approach to achieve magnetic-field-free spin-orbit torque (SOT) perpendicular magnetization switching in ultrathin nanostructures without modifying the architecture of a standard SOT-MRAM cell. The approach leverages a synergistic effect of lateral geometrical confinement, interfacial Dzyaloshinskii-Moriya interaction (DMI), and current-induced SOT. Micromagnetic and atomistic spin dynamics (ASD) simulations were used to study the nucleation and growth kinetics of reversed domains. A machine learning model, trained on micromagnetic simulation data, predicts the nanomagnet size, DMI strength, and current density needed for field-free switching.

Minyi Dai, Jia-Mian Hu