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Evolution of defect formation during atomically precise desulfurization of monolayer MoS2

Engineering and Technology

Evolution of defect formation during atomically precise desulfurization of monolayer MoS2

J. Lee, J. H. Kim, et al.

Discover how Jong-Young Lee and colleagues have unveiled the intricate dynamics of defect formation in monolayer MoS2 when exposed to hydrogen plasma. Their findings highlight the delicate balance between material integrity and the introduction of defects, paving the way for advancements in photocatalysis and innovative materials like Janus heterostructures.

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Playback language: English
Abstract
This study investigates the evolution of defect formation in monolayer MoS2 exposed to hydrogen plasma using atomic-scale microscopy. Initially, only top-layer sulfur atoms are removed, preserving the molybdenum layer and bottom sulfur atoms. Prolonged exposure leads to hexagonal nanocracks due to strain relaxation. Increasing defect density reduces photoluminescence and conductivity, while friction increases by 50%. The findings detail defect formation during MoS2 desulfurization and aid in designing symmetry-breaking transition metal dichalcogenides for applications like photocatalysis and Janus heterostructures.
Publisher
Communications Materials
Published On
Jul 23, 2021
Authors
Jong-Young Lee, Jong Hun Kim, Yeonjoon Jung, June Chul Shin, Yangjin Lee, Kwanpyo Kim, Namwon Kim, Arend M. van der Zande, Jangyup Son, Gwan-Hyoung Lee
Tags
MoS2
defect formation
hydrogen plasma
photoluminescence
conductivity
strain relaxation
nanocracks
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