Carrier transport theory for twisted bilayer graphene in the metallic regime

This paper presents a rigorous theory for phonon-dominated transport in twisted bilayer graphene (tBG), explaining its unusual resistivity signatures. The theory accurately models resistivity variations with electron density, temperature, and twist angle, showing good agreement with experiments. It contrasts this with the Planckian dissipation mechanism, which is shown to be incompatible with experimental data. The study goes beyond typical treatments by including intraband and interband processes, considering finite-temperature dynamical screening, and moving beyond the linear Dirac dispersion.

Gargee Sharma, Indra Yudhistira, Nilotpal Chakraborty, Derek Y. H. Ho, M. M. Al Ezzi, Michael S. Fuhrer, Giovanni Vignale, Shaffique Adam