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Carrier transport theory for twisted bilayer graphene in the metallic regime

Physics

Carrier transport theory for twisted bilayer graphene in the metallic regime

G. Sharma, I. Yudhistira, et al.

This groundbreaking research by Gargee Sharma and team delves into phonon-dominated transport in twisted bilayer graphene, shedding light on its unique resistivity signatures. The study provides a robust theoretical framework that aligns closely with experimental observations, challenging existing dissipation mechanisms and paving the way for future exploration.

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Playback language: English
Abstract
This paper presents a rigorous theory for phonon-dominated transport in twisted bilayer graphene (tBG), explaining its unusual resistivity signatures. The theory accurately models resistivity variations with electron density, temperature, and twist angle, showing good agreement with experiments. It contrasts this with the Planckian dissipation mechanism, which is shown to be incompatible with experimental data. The study goes beyond typical treatments by including intraband and interband processes, considering finite-temperature dynamical screening, and moving beyond the linear Dirac dispersion.
Publisher
Nature Communications
Published On
Sep 30, 2021
Authors
Gargee Sharma, Indra Yudhistira, Nilotpal Chakraborty, Derek Y. H. Ho, M. M. Al Ezzi, Michael S. Fuhrer, Giovanni Vignale, Shaffique Adam
Tags
twisted bilayer graphene
phonon transport
resistivity
electron density
temperature
theoretical model
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