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Bridging the gap between atomically thin semiconductors and metal leads

Physics

Bridging the gap between atomically thin semiconductors and metal leads

X. Cai, Z. Wu, et al.

This groundbreaking research by Xiangbin Cai, Zefei Wu, Xu Han, and their colleagues presents a novel approach to achieve nearly barrier-free electrical contacts in atomically thin transition metal dichalcogenide semiconductors. By engineering interfacial bonding distortion, they significantly enhance carrier-injection efficiency, achieving low contact resistance and remarkable mobility, paving the way for advanced TMDSC device design.

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Playback language: English
Abstract
Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging due to interface barriers. This paper demonstrates a strategy to achieve nearly barrier-free electrical contacts by engineering interfacial bonding distortion. The carrier-injection efficiency is increased, resulting in low contact resistance (down to 90 Ωμm in MoS2), high field-effect mobility (up to 358,000 cm²V⁻¹s⁻¹ in WSe2), and improved cryogenic transport characteristics. This method offers possibilities for manipulating atomic structures and electronic properties in TMDSC device design.
Publisher
Nature Communications
Published On
Apr 01, 2022
Authors
Xiangbin Cai, Zefei Wu, Xu Han, Yong Chen, Shuigang Xu, Jiangxiazi Lin, Tianyi Han, Pingge He, Xuemeng Feng, Liheng An, Run Shi, Jingwei Wang, Zhehan Ying, Yuan Cai, Mengyuan Hua, Junwei Liu, Ding Pan, Chun Cheng, Ning Wang
Tags
transition metal dichalcogenides
electrical contacts
interface barriers
carrier-injection efficiency
contact resistance
field-effect mobility
atomic structures
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